Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
Sign Up to like & getrecommendations! Published in 2018 at "Advanced Science"
DOI: 10.1002/advs.201700637
Abstract: Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage… read more here.
Keywords: tin doped; plasma; doped indium; indium oxide ... See more keywords
Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202202529
Abstract: Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the… read more here.
Keywords: ws2 glass; crystalline gan; gan; single crystalline ... See more keywords
Hole-mediated ferromagnetism in GaN doped with Cu and Mn
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04070-7
Abstract: We present a cathodoluminescence (CL) and superconducting quantum interference device (SQUID) magnetometry study of the generation of ferromagnetism (FM) in GaN doped with non-magnetic (copper) and magnetic (manganese) impurities. Our results suggest that p–d hybridization… read more here.
Keywords: gan doped; gan gan; ferromagnetism gan; gan ... See more keywords
Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5773-5
Abstract: For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar… read more here.
Keywords: phase; microscopy; non polar; gan ... See more keywords
Facile growth of high aspect ratio c-axis GaN nanowires and their application as flexible p-n NiO/GaN piezoelectric nanogenerators
Sign Up to like & getrecommendations! Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2018.09.030
Abstract: Abstract Piezoelectric nanogenerators (PNGs) have attracted great interest as energy sources to power-up smart clothing, micro/nano systems, and portable electronic gadgets. Due to non-centrosymmetric crystal structure, bio-compatibility, and mechanical robustness of GaN, it is a… read more here.
Keywords: piezoelectric nanogenerators; aspect ratio; gan nanowires; gan ... See more keywords
The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150684
Abstract: Abstract The influence of growth temperature (200–300 ℃) on the properties of gallium nitride (GaN) directly deposited on Kapton by plasma-enhanced atomic layer deposition (PEALD) has been systematically investigated. With increasing growth temperatures, the O… read more here.
Keywords: growth; deposited kapton; gan; diffusion ... See more keywords
Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.02.006
Abstract: Abstract Vertically well-aligned homo-epitaxial GaN nanowall network (NWN) was grown on metal organic chemical vapor deposited 3.5 μm thick GaN (0001) on c-sapphire by laser assisted molecular beam epitaxy (LMBE). The honeycomb GaN NWN with wall… read more here.
Keywords: temperature; gan nwn; epitaxial gan; gan ... See more keywords
Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.162069
Abstract: Abstract To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film as scattering medium as well as light-coupling component was prepared by electrochemical (EC) etching followed by annealing process. The Lu2O3:Eu film… read more here.
Keywords: lu2o3; gan substrates; gan; substrates photonic ... See more keywords
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.12.005
Abstract: Abstract Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were investigated to obtain a high quality GaN/AlN/GaN structure with a few-nm-thick AlN… read more here.
Keywords: gan; low temperature; aln gan; metal organic ... See more keywords
Study of stress in ammonothermal non-polar and semi-polar GaN crystal grown on HVPE GaN seeds
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125423
Abstract: Abstract GaN crystals were grown on non-polar and semi-polar HVPE GaN seeds by basic ammonothermal method. Stress distributions were investigated in cross-section of (1 1 −2 0) plane, (1 0 −1 0) plane, (2 0 −2 1) plane and (1 0 −1 1) plane GaN crystal. The… read more here.
Keywords: semi polar; hvpe; non polar; gan ... See more keywords
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.12.036
Abstract: Abstract In this work, we report on the metal-organic-chemical-vapour-deposition (MOCVD) and characterization of Al-rich thin layers of AlGaN on conductive GaN, to be used as emitter-base barriers for graphene hot electron transistors. After preliminary experiments,… read more here.
Keywords: gan; electron; barrier; bulk gan ... See more keywords