Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
Sign Up to like & getrecommendations! Published in 2018 at "Advanced Science"
DOI: 10.1002/advs.201700637
Abstract: Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage… read more here.
Keywords: tin doped; plasma; doped indium; indium oxide ... See more keywords
Construction of GAN‐RES and Its Application to Small Sample Fusulinid Fossil Recognition
Sign Up to like & getrecommendations! Published in 2025 at "Ecology and Evolution"
DOI: 10.1002/ece3.71845
Abstract: ABSTRACT Traditional fossil identification relies on the rich experience and knowledge of paleontologists, and existing intelligent identification methods mainly rely on deep learning to train on a large number of fossil graphic samples to achieve… read more here.
Keywords: construction gan; recognition; res application; gan res ... See more keywords
Region-guided focal adversarial learning for CT-to-MRI translation: A proof-of-concept and validation study in hepatocellular carcinoma.
Sign Up to like & getrecommendations! Published in 2025 at "Medical physics"
DOI: 10.1002/mp.17674
Abstract: BACKGROUND Generative adversarial networks (GANs) have recently demonstrated significant potential for producing virtual images with the same characteristics as real-life landscapes, thereby enhancing various medical tasks. PURPOSE To design a region-guided focal GAN (Focal-GAN) for… read more here.
Keywords: focal gan; validation; region guided; hepatocellular carcinoma ... See more keywords
Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202202529
Abstract: Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the… read more here.
Keywords: ws2 glass; crystalline gan; gan; single crystalline ... See more keywords
Turn Your Vision into Reality—AI-Powered Pre-operative Outcome Simulation in Rhinoplasty Surgery
Sign Up to like & getrecommendations! Published in 2024 at "Aesthetic Plastic Surgery"
DOI: 10.1007/s00266-024-04043-9
Abstract: The increasing demand and changing trends in rhinoplasty surgery emphasize the need for effective doctor–patient communication, for which Artificial Intelligence (AI) could be a valuable tool in managing patient expectations during pre-operative consultations. To develop… read more here.
Keywords: surgery; rhinoplasty surgery; gan; pre operative ... See more keywords
Hole-mediated ferromagnetism in GaN doped with Cu and Mn
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04070-7
Abstract: We present a cathodoluminescence (CL) and superconducting quantum interference device (SQUID) magnetometry study of the generation of ferromagnetism (FM) in GaN doped with non-magnetic (copper) and magnetic (manganese) impurities. Our results suggest that p–d hybridization… read more here.
Keywords: gan doped; gan gan; ferromagnetism gan; gan ... See more keywords
Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5773-5
Abstract: For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms governing the topography and single phase epitaxy of non-polar… read more here.
Keywords: phase; microscopy; non polar; gan ... See more keywords
Facile growth of high aspect ratio c-axis GaN nanowires and their application as flexible p-n NiO/GaN piezoelectric nanogenerators
Sign Up to like & getrecommendations! Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2018.09.030
Abstract: Abstract Piezoelectric nanogenerators (PNGs) have attracted great interest as energy sources to power-up smart clothing, micro/nano systems, and portable electronic gadgets. Due to non-centrosymmetric crystal structure, bio-compatibility, and mechanical robustness of GaN, it is a… read more here.
Keywords: piezoelectric nanogenerators; aspect ratio; gan nanowires; gan ... See more keywords
The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150684
Abstract: Abstract The influence of growth temperature (200–300 ℃) on the properties of gallium nitride (GaN) directly deposited on Kapton by plasma-enhanced atomic layer deposition (PEALD) has been systematically investigated. With increasing growth temperatures, the O… read more here.
Keywords: growth; deposited kapton; gan; diffusion ... See more keywords
Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.02.006
Abstract: Abstract Vertically well-aligned homo-epitaxial GaN nanowall network (NWN) was grown on metal organic chemical vapor deposited 3.5 μm thick GaN (0001) on c-sapphire by laser assisted molecular beam epitaxy (LMBE). The honeycomb GaN NWN with wall… read more here.
Keywords: temperature; gan nwn; epitaxial gan; gan ... See more keywords
Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.162069
Abstract: Abstract To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film as scattering medium as well as light-coupling component was prepared by electrochemical (EC) etching followed by annealing process. The Lu2O3:Eu film… read more here.
Keywords: lu2o3; gan substrates; gan; substrates photonic ... See more keywords