Electronic structure and optical properties of N vacancy and O filling on n-GaN (0001) surface
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.04.021
Abstract: Abstract In the X-ray photoelectron spectroscopy experiment, we observed that the valence band spectrum of the n-GaN (0001) surface appeared a bump near 1.9 eV after Ar etching and the N/Ga ratio became smaller, while the… read more here.
Keywords: 0001 surface; electronic structure; vacancy; gan 0001 ... See more keywords
Effects of Potassium Adsorption and Potassium–Water Coadsorption on the Chemical and Electronic Properties of n-Type GaN(0001) Surfaces
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b09512
Abstract: The interaction of n-type GaN(0001) surfaces with potassium and water is investigated using photoelectron spectroscopy, with special focus on adsorbate–substrate charge-transfer processes and water dissociation. Potassium atoms adsorb at the surface, forming a distinct surface… read more here.
Keywords: potassium; water; gan 0001; surface ... See more keywords
Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4973956
Abstract: Structural and magnetic properties of 1–10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak… read more here.
Keywords: deposited gan; structural magnetic; ultra thin; gan 0001 ... See more keywords
Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga.
Sign Up to like & getrecommendations! Published in 2020 at "Physical review letters"
DOI: 10.1103/physrevlett.124.086101
Abstract: The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the… read more here.
Keywords: gan 0001; liquid interface; solid liquid; structure ... See more keywords
Interfacial Polarization of Thin Alq3, Gaq3, and Erq3 Films on GaN(0001)
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15051671
Abstract: This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq3, Gaq3, or Erq3 deposited on GaN semiconductor. The formation of the interfaces and their characterization have been… read more here.
Keywords: gaq3 erq3; spectroscopy; gan 0001; alq3 gaq3 ... See more keywords