Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
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DOI: 10.1134/s1063782618160297
Abstract: Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by… read more here.
Keywords: epitaxial structures; 111 epitaxial; chemical etching; structures mems ... See more keywords