Selective anisotropic etching of GaN over AlGaN for very thin films
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DOI: 10.1116/1.5012530
Abstract: Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the… read more here.
Keywords: al0 25ga0; 25ga0 75n; oxygen flow; gan al0 ... See more keywords