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Published in 2018 at "Technical Physics Letters"
DOI: 10.1134/s1063785018120398
Abstract: High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin…
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Keywords:
gan al2o3;
luminescence zno;
features luminescence;
zno gan ... See more keywords