LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "gan algan" as a keyword



Formation of quantum dots in GaN/AlGaN FETs

Sign Up to like & get
recommendations! Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-72269-z

Abstract: GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in… read more here.

Keywords: algan fets; gan algan; formation quantum; dots gan ... See more keywords

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy.

Sign Up to like & get
recommendations! Published in 2023 at "Nanoscale horizons"

DOI: 10.1039/d2nh00500j

Abstract: GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N2 carrier gas resulted in… read more here.

Keywords: gas; growth; core shell; area ... See more keywords

GaN/AlGaN photonic crystal narrowband thermal emitters on a semi-transparent low-refractive-index substrate

Sign Up to like & get
recommendations! Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5019387

Abstract: We demonstrate a GaN/AlGaN photonic crystal thermal emitter supported by a semi-transparent low-refractive-index substrate for mid-wavelength infrared operation. The employment of the substrate increases the mechanical strength of the photonic crystal, and enables the fabrication… read more here.

Keywords: gan algan; photonic crystal; algan photonic; substrate ... See more keywords

Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction

Sign Up to like & get
recommendations! Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5041363

Abstract: Spin resonance of a two-dimensional electron system confined in a GaN/AlGaN heterostructure grown by molecular beam epitaxy was resistively detected over a wide range of magnetic field and microwave frequency. Although the spin-orbit interaction is… read more here.

Keywords: resonance; gan algan; spin resonance; magnetic field ... See more keywords
Photo by mustivex from unsplash

Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)

Sign Up to like & get
recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0005484

Abstract: The integration of GaN on Si as large scale substrates still faces many hurdles. Besides the large difference in the lattice constant and the high thermal mismatch existing between GaN and Si, spiral hillock growth… read more here.

Keywords: heterostructures grown; formation; gan algan; hillock ... See more keywords

GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Sign Up to like & get
recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0033047

Abstract: Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum… read more here.

Keywords: quantum; transport photoluminescence; transport; magneto transport ... See more keywords

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Sign Up to like & get
recommendations! Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0139158

Abstract: A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is… read more here.

Keywords: composition; hole gas; density; gan algan ... See more keywords

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Sign Up to like & get
recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0219359

Abstract: This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier.… read more here.

Keywords: leakage; algan hemts; parasitic channel; channel ... See more keywords

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Sign Up to like & get
recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0231294

Abstract: In this Letter, time-dependent gate breakdown (TDB) characteristics under dynamic switching conditions were investigated in p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with either Schottky-type or Ohmic-type gates. The dynamic TDB of the Schottky-type devices increased with frequencies… read more here.

Keywords: algan gan; gan algan; dependent gate; type devices ... See more keywords

Two-phonon-resonance terahertz quantum cascade laser based on GaN/AlGaN material system

Sign Up to like & get
recommendations! Published in 2019 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ab1401

Abstract: In this paper, a two-phonon-resonance terahertz quantum cascade laser (THz QCL) based on GaN/AlGaN material system is proposed. GaN/AlGaN material system is first studied in two-phonon-resonance active region structure by using rate equations. The active… read more here.

Keywords: material system; two phonon; phonon resonance; material ... See more keywords

Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure

Sign Up to like & get
recommendations! Published in 2025 at "Chinese Physics B"

DOI: 10.1088/1674-1056/ae0397

Abstract: Polarization-induced two-dimensional hole gases (2DHG) in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors. This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD… read more here.

Keywords: hole gases; dimensional hole; two dimensional; gan thickness ... See more keywords