Formation of quantum dots in GaN/AlGaN FETs
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-72269-z
Abstract: GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in… read more here.
Keywords: algan fets; gan algan; formation quantum; dots gan ... See more keywords
Core-shell GaN/AlGaN nanowires grown by selective area epitaxy.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale horizons"
DOI: 10.1039/d2nh00500j
Abstract: GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N2 carrier gas resulted in… read more here.
Keywords: gas; growth; core shell; area ... See more keywords
GaN/AlGaN photonic crystal narrowband thermal emitters on a semi-transparent low-refractive-index substrate
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5019387
Abstract: We demonstrate a GaN/AlGaN photonic crystal thermal emitter supported by a semi-transparent low-refractive-index substrate for mid-wavelength infrared operation. The employment of the substrate increases the mechanical strength of the photonic crystal, and enables the fabrication… read more here.
Keywords: gan algan; photonic crystal; algan photonic; substrate ... See more keywords
Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5041363
Abstract: Spin resonance of a two-dimensional electron system confined in a GaN/AlGaN heterostructure grown by molecular beam epitaxy was resistively detected over a wide range of magnetic field and microwave frequency. Although the spin-orbit interaction is… read more here.
Keywords: resonance; gan algan; spin resonance; magnetic field ... See more keywords
Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0005484
Abstract: The integration of GaN on Si as large scale substrates still faces many hurdles. Besides the large difference in the lattice constant and the high thermal mismatch existing between GaN and Si, spiral hillock growth… read more here.
Keywords: heterostructures grown; formation; gan algan; hillock ... See more keywords
GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0033047
Abstract: Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum… read more here.
Keywords: quantum; transport photoluminescence; transport; magneto transport ... See more keywords
High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0139158
Abstract: A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is… read more here.
Keywords: composition; hole gas; density; gan algan ... See more keywords
Two-phonon-resonance terahertz quantum cascade laser based on GaN/AlGaN material system
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab1401
Abstract: In this paper, a two-phonon-resonance terahertz quantum cascade laser (THz QCL) based on GaN/AlGaN material system is proposed. GaN/AlGaN material system is first studied in two-phonon-resonance active region structure by using rate equations. The active… read more here.
Keywords: material system; two phonon; phonon resonance; material ... See more keywords
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Sign Up to like & getrecommendations! Published in 2020 at "Micromachines"
DOI: 10.3390/mi11010101
Abstract: We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically,… read more here.
Keywords: algan aln; vertical leakage; leakage; gan algan ... See more keywords
GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13020147
Abstract: Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical and material sciences. Existing technologies face problems, such as sensitivity or resilience. Here, we describe a novel class of X-ray… read more here.
Keywords: gan algan; gan heterostructures; ray imaging; innovative ray ... See more keywords
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040589
Abstract: A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a… read more here.
Keywords: icp; gan algan; etching gan; high selectivity ... See more keywords