Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106954
Abstract: Abstract The impact of graded Al0.05Ga0.95N sub-channel over the DC characteristics of AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated here. By placing a field plate over the gate region and forming… read more here.
Keywords: algan gan; hemt; mos hemt; gan alinn ... See more keywords
An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Electrical and Computer Engineering"
DOI: 10.11591/ijece.v10i2.pp1791-1804
Abstract: We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects.… read more here.
Keywords: analytical model; gan hemts; algan gan; alinn gan ... See more keywords