Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
Sign Up to like & getrecommendations! Published in 2021 at "Nano Research"
DOI: 10.1007/s12274-021-3855-4
Abstract: Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the… read more here.
Keywords: shift; new approach; gan aln; coherent interface ... See more keywords
Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires.
Sign Up to like & getrecommendations! Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b03414
Abstract: Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable… read more here.
Keywords: intersubband; intersubband photodetection; near infrared; infrared intersubband ... See more keywords
Synthesis of Colloidal GaN and AlN Nanocrystals in Biphasic Molten Salt/Organic Solvent Mixtures under High-Pressure Ammonia.
Sign Up to like & getrecommendations! Published in 2023 at "ACS nano"
DOI: 10.1021/acsnano.2c09552
Abstract: Group III nitrides are of great technological importance for electronic devices. These materials have been widely manufactured via high-temperature methods such as physical vapor transport (PVT), chemical vapor deposition (CVD), and hydride vapor phase epitaxy… read more here.
Keywords: gan aln; biphasic molten; synthesis; pressure ... See more keywords
Optical emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template.
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale"
DOI: 10.1039/c7nr08057c
Abstract: We show that one-dimensional (1d) GaN quantum-wires (QWRs) exhibit intense and spectrally sharp emission lines. These QWRs are realized in an entirely self-assembled growth process by molecular beam epitaxy (MBE) on the side facets of… read more here.
Keywords: quantum; gan aln; nanowire; quantum wires ... See more keywords
Nano-phononic metamaterials enable an anomalous enhancement in the interfacial thermal conductance of the GaN/AlN heterojunction.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr05954a
Abstract: Improving the interfacial thermal conductance (ITC) is very important for heat dissipation in microelectronic and optoelectronic devices. In this work, taking GaN-AlN contact as an example, we demonstrated a new mechanism to enhance the interfacial… read more here.
Keywords: nano phononic; thermal conductance; gan aln; interfacial thermal ... See more keywords
Optical and structural study of deformation states in the GaN/AlN superlattices
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4999175
Abstract: We report on the effect of strain on the optical and structural properties of 5-, 10-, and 20-period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy. The deformation state in SLs has been studied… read more here.
Keywords: structural study; aln superlattices; deformation; gan aln ... See more keywords
Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5000844
Abstract: Deep ultraviolet (UV) optical emission below 250 nm (∼5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in… read more here.
Keywords: quantum; emission 219; gan aln; deep emission ... See more keywords
Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abf957
Abstract: Semiconductor-based avalanche photodiodes (APDs) have the advantages of lower power and simpler fabrication of arrays compared with photomultiplier tubes. It is critical for weak-light imaging that the APD is operated under back illumination and with… read more here.
Keywords: gain; avalanche photodiodes; aln periodically; gan aln ... See more keywords
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa8504
Abstract: In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band… read more here.
Keywords: absorption; absorption doped; band; gan aln ... See more keywords
The Influence of Structure Parameter on GaN/AlN Periodically Stacked Structure Avalanche Photodiode
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2017.2766454
Abstract: Recently, we have verified an inter-valley scattering free avalanche photodiode (APD) by using GaN/AlN periodically stacked structure (PSS). High linear-mode gain and extremely low excess noise have been achieved in a prototype GaN (10 nm)/… read more here.
Keywords: stacked structure; aln periodically; avalanche photodiode; gan aln ... See more keywords
The Features of Phase Stability of GaN and AlN Films at Nanolevel
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano11010008
Abstract: Recently, two-dimensional gallium and aluminum nitrides have triggered a vast interest in their tunable optical and electronic properties. Continuation of this research requires a detailed understanding of their atomic structure. Here, by using first-principles calculations… read more here.
Keywords: gan aln; stability gan; phase stability; features phase ... See more keywords