Band Bending of n-GaN under Ambient H2O Vapor Studied by X-ray Photoelectron Spectroscopy
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DOI: 10.1021/acs.jpcc.0c11174
Abstract: To improve the performance of semiconductor photoelectrodes for water splitting, the amount of band bending in the depletion layer of a semiconductor should be accurately ascertained, since it dete... read more here.
Keywords: ambient h2o; band bending; spectroscopy; bending gan ... See more keywords