Electron Holographic Study of Semiconductor Light-Emitting Diodes.
Sign Up to like & getrecommendations! Published in 2018 at "Small"
DOI: 10.1002/smll.201701996
Abstract: Semiconductor light-emitting diodes (LEDs), especially GaN-based heterostructures, are widely used in light illumination. The lack of inversion symmetry of wurtzite crystal structures and the lattice mismatch at heterointerfaces cause large polarization fields with contributions from… read more here.
Keywords: gan based; semiconductor; polarization; emitting diodes ... See more keywords
Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202106757
Abstract: Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro… read more here.
Keywords: gan based; based optoelectronic; optical resonances; optoelectronic devices ... See more keywords
Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation
Sign Up to like & getrecommendations! Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-016-0861-y
Abstract: GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high or negative characteristic temperature (T0). In this work, the temperature characteristics of blue LDs having InGaN double quantum-well (QW) active… read more here.
Keywords: temperature; gan based; characteristic temperature; negative characteristic ... See more keywords
Internal power loss in GaN-based lasers: mechanisms and remedies
Sign Up to like & getrecommendations! Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-1166-5
Abstract: GaN-based laser diodes transform only a relatively small fraction of the electrical input power into laser light. The inherently large series resistance of these devices causes significant self-heating that leads to the typical power roll-off… read more here.
Keywords: loss gan; gan based; power; power loss ... See more keywords
GaN-based bipolar cascade lasers with 25 nm wide quantum wells
Sign Up to like & getrecommendations! Published in 2022 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-021-03455-0
Abstract: In good agreement with measurements, self-consistent numerical simulations are utilized to analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly… read more here.
Keywords: quantum wells; gan based; bipolar cascade; quantum ... See more keywords
Theoretical study of the influence of surface effects on GaN-based chemical sensors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.04.250
Abstract: Abstract This paper presents the results of the theoretical study of various factors affecting the charging mechanism and characteristics of the Ga2O3/GaN/AlGaN based ion sensitive field effect transistor (ISFET). The relaxed atomic coordinates of electrolytes… read more here.
Keywords: based chemical; theoretical study; gan based; layer ... See more keywords
Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes
Sign Up to like & getrecommendations! Published in 2018 at "Optik"
DOI: 10.1016/j.ijleo.2018.07.081
Abstract: Abstract A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%–30%. The experimental built-in fields of the samples have been… read more here.
Keywords: field gan; gan based; field; based light ... See more keywords
Enhanced light extraction of GaN-based vertical LEDs with patterned trenches and nanostructures
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.09.036
Abstract: Abstract An efficient surface texturing technique that uses patterned trench etching and the selective formation of GaN nanostructures on the trench bottoms to improve the light extraction of vertical GaN-based light-emitting diodes (VLEDs) is proposed… read more here.
Keywords: enhanced light; extraction gan; gan based; light extraction ... See more keywords
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.09.028
Abstract: Abstract In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of… read more here.
Keywords: gan based; gate; hemts; mis hemts ... See more keywords
Deterioration of near-UV GaN-based LEDs in seawater vapour
Sign Up to like & getrecommendations! Published in 2020 at "Results in physics"
DOI: 10.1016/j.rinp.2020.103432
Abstract: Abstract Reliability investigations were conducted after GaN-based LEDs were stressed in seawater vapour. Multiple electrical, optical, and material analyses on the fine nanostructures of the LED were examined. Results indicate that dark spots on the… read more here.
Keywords: based leds; leds seawater; deterioration near; seawater vapour ... See more keywords
Suppression of optical field leakage to GaN substrate in GaN-based green laser diode
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.01.012
Abstract: Abstract In this study, n-InGaN and u-InGaN are proposed to be the lower waveguide (LWG) and quantum barrier (QB), respectively, to eliminate the leakage of optical field to GaN substrate in GaN-based green laser diode… read more here.
Keywords: optical field; based green; gan based; field ... See more keywords