LAUSR

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

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1 Published in 2021 at "Applied Physics Letters"

DOI: 10.1063/5.0040326

Abstract: An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects… read more here.

Keywords: temperature; growth temperature; ingan gan; gan buffer ... See more keywords

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

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2 Published in 2023 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2023.3262228

Abstract: This brief investigates the influence of a $\Pi $ -shaped gate in extending the microwave performance of a thin GaN buffer AlGaN/GaN HEMT. A well-calibrated simulation deck based on the in-house fabricated thin GaN HEMT… read more here.

Keywords: thin gan; inline formula; gan buffer; tex math ... See more keywords

Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

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3 Published in 2023 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2023.3269409

Abstract: In this work, a well-calibrated computational framework is used to probe the physical mechanisms leading to electron trapping in the carbon-doped GaN buffer in AlGaN/GaN HEMTs. Device variants having higher lateral electric field were found… read more here.

Keywords: electron trapping; dynamic resistance; gan buffer; buffer ... See more keywords

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor

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2 Published in 2022 at "Materials"

DOI: 10.3390/ma15176043

Abstract: An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device… read more here.

Keywords: algan gan; growth; high electron; gan high ... See more keywords

Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices

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1 Published in 2019 at "Applied Physics Express"

DOI: 10.7567/1882-0786/aaf4ee

Abstract: We demonstrate that GaN-on-diamond technology with an ultra-thin GaN buffer and interface layer offers excellent thermal resistance alongside good electrical performance. Two device sets were investigated, one with 354 nm thick GaN buffer and 17… read more here.

Keywords: gan buffer; gan diamond; gan; buffer interface ... See more keywords