Theoretical study of the influence of surface effects on GaN-based chemical sensors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.04.250
Abstract: Abstract This paper presents the results of the theoretical study of various factors affecting the charging mechanism and characteristics of the Ga2O3/GaN/AlGaN based ion sensitive field effect transistor (ISFET). The relaxed atomic coordinates of electrolytes… read more here.
Keywords: based chemical; theoretical study; gan based; layer ... See more keywords
Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.106125
Abstract: Abstract The growth and properties of the GaN cap layers crystallized by metalorganic vapor phase epitaxy were studied concerning the composition of the underlying AlGaN layer, type of induced strains and the desorption of the… read more here.
Keywords: composition underlying; growth; layer; cap layer ... See more keywords
Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
Sign Up to like & getrecommendations! Published in 2017 at "Technical Physics"
DOI: 10.1134/s1063784217080035
Abstract: The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited… read more here.
Keywords: low temperature; gan cap; influence low; concentration ... See more keywords