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   Articles with "gan cap" as a keyword



Theoretical study of the influence of surface effects on GaN-based chemical sensors

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recommendations! Published in 2018 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2018.04.250

Abstract: Abstract This paper presents the results of the theoretical study of various factors affecting the charging mechanism and characteristics of the Ga2O3/GaN/AlGaN based ion sensitive field effect transistor (ISFET). The relaxed atomic coordinates of electrolytes… read more here.

Keywords: based chemical; theoretical study; gan based; layer ... See more keywords

Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN

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recommendations! Published in 2021 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2021.106125

Abstract: Abstract The growth and properties of the GaN cap layers crystallized by metalorganic vapor phase epitaxy were studied concerning the composition of the underlying AlGaN layer, type of induced strains and the desorption of the… read more here.

Keywords: composition underlying; growth; layer; cap layer ... See more keywords

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

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recommendations! Published in 2024 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/ad4db1

Abstract: The p-GaN-gated E-mode HEMTs (P-HEMTs) are being extensively studied for emerging power electronics. However, the devices still suffer from performance trade-off among threshold voltage (V TH), output drain current (I DS), and breakdown voltage (V… read more here.

Keywords: gan cap; performance; cap layer; stair ... See more keywords

High-reliability normally off AlGaN/GaN HEMTs with a 720 V breakdown voltage via a TCAD-optimized GaN cap layer

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recommendations! Published in 2025 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ae0758

Abstract: This work presents a detailed Technology Computer Aided Design (TCAD) and Transport of Ions in Matter (TRIM)-based simulation study of normally off AlGaN/GaN high-electron-mobility transistors (HEMTs), focusing on the influence of the thickness of the… read more here.

Keywords: gan cap; cap layer; voltage; normally algan ... See more keywords

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

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recommendations! Published in 2017 at "Technical Physics"

DOI: 10.1134/s1063784217080035

Abstract: The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited… read more here.

Keywords: low temperature; gan cap; influence low; concentration ... See more keywords

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

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recommendations! Published in 2024 at "Micromachines"

DOI: 10.3390/mi15050571

Abstract: We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It was found that the surface morphology of… read more here.

Keywords: layer; cap thickness; gan cap; algan gan ... See more keywords