Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0147048
Abstract: In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well… read more here.
Keywords: gan channel; electron mobility; microscopy; algan gan ... See more keywords
Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2824985
Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.
Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords