Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07111-y
Abstract: The morphology of GaN crystals grown in a temperature range of 800–860°C by the Na flux liquid phase epitaxial (LPE) method was observed by the optical microscope and the scanning electron microscope (SEM). Significant changes… read more here.
Keywords: morphology gan; temperature; growth temperature; gan crystals ... See more keywords
High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE
Sign Up to like & getrecommendations! Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-21607-3
Abstract: In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al2O3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al2O3 (TEMGA) templates were utilized to grow… read more here.
Keywords: novel nanoporous; template; high quality; nanoporous template ... See more keywords
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5047531
Abstract: The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation… read more here.
Keywords: temperature; conductivity gan; thermal conductivity; conductivity ... See more keywords
Ultrafast bulk carrier dynamics in various GaN crystals at near-infrared wavelengths under one- and two-photon absorption
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5089108
Abstract: Femtosecond transient absorption (TA) as a probe of ultrafast carrier dynamics was conducted at near-infrared wavelengths in a series of GaN crystals. The TA kinetics in all the GaN crystals appeared to be single exponential… read more here.
Keywords: absorption; photon; near infrared; carrier dynamics ... See more keywords
Elasticity and Inelasticity of Bulk GaN Crystals
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DOI: 10.1134/s1063784220010089
Abstract: Abstract The elastic and microplastic properties of large quasi-bulk GaN samples of two types, grown by hydride vapor-phase epitaxy, have been acoustically investigated. Samples of the first type are polycrystals textured along a crystallographic direction,… read more here.
Keywords: bulk; inelasticity bulk; elasticity inelasticity; gan crystals ... See more keywords
Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt
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DOI: 10.3390/cryst11091058
Abstract: GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N2 pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw… read more here.
Keywords: technique alloy; alloy melt; recrystallization technique; pressure ... See more keywords
Influence of Pressure on the Mechanical and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
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DOI: 10.3390/cryst8110428
Abstract: The mechanical and electronic properties of two GaN crystals, wurtzite and zinc-blende GaN, under various hydrostatic pressures were investigated using first principles calculations. The results show that the lattice constants of the two GaN crystals… read more here.
Keywords: pressure; zinc blende; blende gan; gan crystals ... See more keywords