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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150684
Abstract: Abstract The influence of growth temperature (200–300 ℃) on the properties of gallium nitride (GaN) directly deposited on Kapton by plasma-enhanced atomic layer deposition (PEALD) has been systematically investigated. With increasing growth temperatures, the O…
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Keywords:
growth;
deposited kapton;
gan;
diffusion ... See more keywords