Exploration of gate trench module for vertical GaN devices
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113828
Abstract: Abstract The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices: we considered the impact of cleaning process of the etched surface of the… read more here.
Keywords: gan devices; gate trench; gate; trench module ... See more keywords
GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2720688
Abstract: GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the… read more here.
Keywords: integration; integration gan; gan devices; 200 platform ... See more keywords
A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2017.2749249
Abstract: Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the… read more here.
Keywords: fast gan; switching current; current measurement; gan devices ... See more keywords
Surface Dispersion Suppression in High-Frequency GaN Devices
Sign Up to like & getrecommendations! Published in 2022 at "Crystals"
DOI: 10.3390/cryst12101461
Abstract: GaN-based high electron mobility transistors (HEMTs) are shown to have excellent properties, showing themselves to perform well among the throng of solid-state power amplifiers. They are particularly promising candidates for next-generation mobile communication applications due… read more here.
Keywords: dispersion suppression; dispersion; surface dispersion; frequency ... See more keywords