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Published in 2019 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2019.03.020
Abstract: Abstract The CVD growth of polycrystalline diamond (PCD) on GaN is a novel and effective approach to improve heat dissipation for high power GaN-based transistors. However, the growth-induced spatial variation in PCD's thermal conductivity makes…
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Keywords:
gan diamond;
pcd;
thermal conductivity;
diamond ... See more keywords
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Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/10/104005
Abstract: A three-dimensional thermal analysis of GaN HEMTs on diamond substrate is investigated using the finite element method. The diamond substrate thickness, area and shape, transition layer thickness and thermal conductivity of the transition layer are…
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Keywords:
diamond;
diamond substrate;
thermal analysis;
gan hemts ... See more keywords
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Published in 2020 at "Journal of Materials Research"
DOI: 10.1557/jmr.2019.403
Abstract: The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat dissipation diamond…
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Keywords:
aluminum nitride;
diamond;
diamond film;
gan diamond ... See more keywords
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Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/aaf4ee
Abstract: We demonstrate that GaN-on-diamond technology with an ultra-thin GaN buffer and interface layer offers excellent thermal resistance alongside good electrical performance. Two device sets were investigated, one with 354 nm thick GaN buffer and 17…
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Keywords:
gan buffer;
gan diamond;
gan;
buffer interface ... See more keywords