Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07098-6
Abstract: Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated, including low reverse leakage… read more here.
Keywords: leakage; regrowth; gan diodes; low reverse ... See more keywords
High voltage GaN p‐n diodes formed by selective area regrowth
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2019.3587
Abstract: GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a… read more here.
Keywords: regrowth; selective area; area; gan diodes ... See more keywords
A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3265625
Abstract: The existence of leakage current pathways leading to the appearance of impact ionization and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a combined Monte Carlo (MC)-deep learning approach.… read more here.
Keywords: monte carlo; impact ionization; impact; deep learning ... See more keywords