Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104833
Abstract: Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different… read more here.
Keywords: implanted gan; gan epitaxial; epitaxial layers; ion implanted ... See more keywords
Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.8b04410
Abstract: Polarity-controlled GaN epitaxial films with Ga- and N-polarity are intentionally obtained by controlling annealing processes of ScAlMgO4 substrates. It is proved by high-angle annular dark-field scanning transmission electron microscopy, in situ reflection high-energy electron diffraction,… read more here.
Keywords: microscopy; epitaxial films; polarity; gan epitaxial ... See more keywords
Epitaxial integration of superconducting nitrides with cubic GaN
Sign Up to like & getrecommendations! Published in 2025 at "APL Materials"
DOI: 10.1063/5.0250514
Abstract: Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits… read more here.
Keywords: nitrides cubic; metal nitrides; epitaxial integration; gan epitaxial ... See more keywords
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb4a0
Abstract: Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in the c-plane GaN epitaxial layers on 6… read more here.
Keywords: epitaxial layers; second harmonic; intensity; gan epitaxial ... See more keywords
Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620140183
Abstract: Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated… read more here.
Keywords: spectroscopy; molecular beam; beam epitaxy; epitaxial layers ... See more keywords
A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers
Sign Up to like & getrecommendations! Published in 2024 at "Micromachines"
DOI: 10.3390/mi15080954
Abstract: A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and… read more here.
Keywords: epitaxial wafers; dislocation; density gan; density ... See more keywords
Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab04f1
Abstract: Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on… read more here.
Keywords: atomic resolution; segregation; layer; pyramidal inversion ... See more keywords