Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104833
Abstract: Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different… read more here.
Keywords: implanted gan; gan epitaxial; epitaxial layers; ion implanted ... See more keywords
Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.8b04410
Abstract: Polarity-controlled GaN epitaxial films with Ga- and N-polarity are intentionally obtained by controlling annealing processes of ScAlMgO4 substrates. It is proved by high-angle annular dark-field scanning transmission electron microscopy, in situ reflection high-energy electron diffraction,… read more here.
Keywords: microscopy; epitaxial films; polarity; gan epitaxial ... See more keywords
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb4a0
Abstract: Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in the c-plane GaN epitaxial layers on 6… read more here.
Keywords: epitaxial layers; second harmonic; intensity; gan epitaxial ... See more keywords
Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620140183
Abstract: Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated… read more here.
Keywords: spectroscopy; molecular beam; beam epitaxy; epitaxial layers ... See more keywords
Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab04f1
Abstract: Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on… read more here.
Keywords: atomic resolution; segregation; layer; pyramidal inversion ... See more keywords