Strain release in GaN epitaxy on 4° off-axis 4H-SiC.
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DOI: 10.1002/adma.202201169
Abstract: The hybrid field-effect transistor (HyFET) superior for power electronic applications can be created by harnessing the merits of two representative wide-bandgap semiconductors, GaN and SiC. Yet, the incompactness in the epitaxy techniques hinders the development… read more here.
Keywords: release gan; axis sic; strain release; epitaxy axis ... See more keywords