Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs
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DOI: 10.1149/2162-8777/acd1b4
Abstract: The threshold voltage (V TH) stability in GaN fat field-effect transistors (FATFETs) with a large channel area of ∼6.2 × 104 μm2 was studied using drain current vs gate voltage (I D–V G) characteristics. Each… read more here.
Keywords: gan fatfets; bias induced; threshold voltage; voltage ... See more keywords