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Published in 2022 at "Small"
DOI: 10.1002/smll.202202529
Abstract: Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the…
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Keywords:
ws2 glass;
crystalline gan;
gan;
single crystalline ... See more keywords
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1
Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2016.10.017
Abstract: Abstract We studied the optical and crystal properties of semipolar (11-22) hexagonal epitaxial lateral overgrown (HELO) GaN films with different SiO2 hexagonal pattern widths (6–15 μm). With increasing SiO2 hexagonal pattern width, it was difficult to…
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Keywords:
gan film;
pattern;
pattern width;
hexagonal pattern ... See more keywords
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1
Published in 2018 at "Optics and Lasers in Engineering"
DOI: 10.1016/j.optlaseng.2018.05.006
Abstract: Abstract Bragg gratings were inscribed with a NIR femtosecond laser, cylindrical lens and a phase mask on the surface of a thin GaN film grown on a sapphire substrate. The phase mask was used to…
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Keywords:
gan film;
sapphire;
thin gan;
inscription ... See more keywords
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2
Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acce5d
Abstract: DC-pulse magnetron sputtering was utilized to deposit a 300 nm-thick n-type GaN thin film that was co-doped with Si–Sn onto an amorphous glass substrate with a ZnO buffer layer. The deposited thin films were then…
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Keywords:
amorphous glass;
film;
glass substrate;
thin film ... See more keywords