Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202001283
Abstract: Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen‐polarity GaN films on transferred graphene… read more here.
Keywords: polarity gan; gan films; nitrogen; light emitting ... See more keywords
The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.143616
Abstract: Abstract In the report, the growth of GaN films on the two-dimension molybdenum disulfide (2D MoS2) and c-sapphire via plasma-assisted molecular beam epitaxy (MBE) was investigated. Two kinds of MoS2 layers were prepared by pulsed… read more here.
Keywords: growth gan; mos2 layers; growth; surface ... See more keywords
The important role of Ga vacancies in the ferromagnetic GaN thin films
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2016.12.405
Abstract: Abstract Room-temperature ferromagnetism was observed in the unintentionally doped GaN films, which were fabricated using laser molecular beam epitaxy followed by annealing process at different temperatures from 800 to 1000 °C for 25 min in flowing nitrogen… read more here.
Keywords: role vacancies; temperature; important role; doped gan ... See more keywords
Structural and magnetic properties of Dy-implanted GaN films
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.04.092
Abstract: Abstract GaN:Dy films were prepared by implanting Dy ions into c-plane (0001) GaN films and a subsequent rapid thermal annealing process. The structural and magnetic properties of samples were investigated by means of X-ray diffraction… read more here.
Keywords: properties implanted; structural magnetic; magnetic properties; thermal annealing ... See more keywords
Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.06.224
Abstract: Abstract The effects of growth temperatures and post-annealing treatment for GaN films by plasma-assisted molecular beam epitaxy are investigated. The heteroepitaxial GaN films were deposited on 4H-SiC substrates with 4° miscutting orientation at growth temperatures… read more here.
Keywords: temperature; microscopy; post annealing; spectroscopy ... See more keywords
Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125539
Abstract: Abstract This work systematically investigates the effects of growth rate on GaN films properties grown on thick GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy (PA-MBE) under Ga-rich conditions without formation of large metal droplets. The… read more here.
Keywords: effects growth; spectroscopy; growth rate; growth ... See more keywords
Tuning of ferromagnetic behavior of GaN films by N ion implantation: An experimental and first principle-based study
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2020.167630
Abstract: Abstract Magnetic properties of N-ion implanted GaN films (150 nm) have been reported. It is found that GaN films grown by the MOCVD technique show strong room temperature ferromagnetic behavior, which can be tuned by implanting… read more here.
Keywords: ferromagnetic behavior; ion implantation; ion; gan films ... See more keywords
High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2020 at "RSC Advances"
DOI: 10.1039/d0ra07856e
Abstract: N-polar GaN films (C, D, E, F) grown with varied V/III ratio show improved crystallinity and reduced impurity concentrations. read more here.
Keywords: polar gan; varied iii; grown varied; films grown ... See more keywords
Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.471111
Abstract: The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The… read more here.
Keywords: laser; damage; gan films; ultrashort laser ... See more keywords