Temperature-dependent analysis of heterojunction-free GaN FinFET through optimization of controlling gate parameters and dielectric materials
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DOI: 10.1515/ijmr-2021-8668
Abstract: Abstract This work presents the temperature-dependent analysis of heterojunction-free gallium nitride (GaN) FinFET through optimization of controlling gate parameters and dielectric materials. The temperature-dependent performance evaluation presents in terms of the transfer characteristic, transconductance, subthreshold… read more here.
Keywords: temperature dependent; dielectric materials; gan finfet; dependent analysis ... See more keywords