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Published in 2023 at "International Journal of Materials Research"
DOI: 10.1515/ijmr-2021-8668
Abstract: Abstract This work presents the temperature-dependent analysis of heterojunction-free gallium nitride (GaN) FinFET through optimization of controlling gate parameters and dielectric materials. The temperature-dependent performance evaluation presents in terms of the transfer characteristic, transconductance, subthreshold…
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Keywords:
temperature dependent;
dielectric materials;
gan finfet;
dependent analysis ... See more keywords