Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159596
Abstract: Abstract Au/GaN/n-GaAs Schottky Barrier Diodes (SBDs) were fabricated by N2 plasma Nitridation of n-GaAs (100) surface yielding to the formation of GaN ultra thin film interfacial layer between AuSchottky contact and n-GaAs substrate. Samples were… read more here.
Keywords: fabrication; gan gaas; electrical quality; gaas sbds ... See more keywords
Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106276
Abstract: Abstract In this paper, two different cleaning methods before nitridation of the Au/GaN/n-GaAs Schottky diodes are investigated. Batch 1 is cleaned chemically and followed by ionic bombardment in an ultra-high vacuum chamber (UHV). On the… read more here.
Keywords: ionic bombardment; schottky diodes; gaas schottky; gan gaas ... See more keywords
Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3269006
Abstract: Here, we use the micro-transfer printing technique to demonstrate the device-level heterogeneous integration of two solid-state RF device technologies on the same interposer: GaN and GaAs high-electron-mobility transistors. The devices are released from their growth… read more here.
Keywords: transfer; micro transfer; transfer printing; device ... See more keywords