Hole-mediated ferromagnetism in GaN doped with Cu and Mn
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04070-7
Abstract: We present a cathodoluminescence (CL) and superconducting quantum interference device (SQUID) magnetometry study of the generation of ferromagnetism (FM) in GaN doped with non-magnetic (copper) and magnetic (manganese) impurities. Our results suggest that p–d hybridization… read more here.
Keywords: gan doped; gan gan; ferromagnetism gan; gan ... See more keywords
Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes
Sign Up to like & getrecommendations! Published in 2021 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927621006449
Abstract: Wide bandgap semiconductors, particularly gallium-nitride (GaN) based devices, are of great interest for high-power electronics because of superior material properties such as wide bandgap (3.44 eV), high thermal conductivity (~1.5 x Si), high critical electric… read more here.
Keywords: effect substrate; gan gan; substrate morphology; gan vertical ... See more keywords
Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5052479
Abstract: To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate... read more here.
Keywords: metalorganic chemical; chemical vapor; gan gan; vapor deposition ... See more keywords
Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5057401
Abstract: The impact of surface treatment on Schottky contacts on a GaN-on-GaN epitaxial layer was comprehensively investigated by combining X-ray photoelectron spectroscopy (XPS) at each step of the treatment process and electrical measurements on Schottky barrier… read more here.
Keywords: surface treatment; schottky barrier; barrier; impact surface ... See more keywords
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0049473
Abstract: The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities… read more here.
Keywords: impact interfacial; gan gan; power; contamination ... See more keywords
Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Physical review applied"
DOI: 10.1103/physrevapplied.13.044034
Abstract: We show that $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ heterostructures exhibit significant $\mathrm{N}$ deficiency at the bottom $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ interface, and that these $\mathrm{N}$ vacancies are responsible for the trapping of holes observed in unoptimized $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ high electron mobility… read more here.
Keywords: mathrm mathrm; gan gan; interfacial vacancies; mathrm ... See more keywords
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.95.125314
Abstract: The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the… read more here.
Keywords: carrier; gan gan; auger recombination; carrier localization ... See more keywords
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2963902
Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after… read more here.
Keywords: gan gan; grown regrown; gan; gan schottky ... See more keywords
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Sign Up to like & getrecommendations! Published in 2020 at "Micromachines"
DOI: 10.3390/mi11050519
Abstract: Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science… read more here.
Keywords: gan schottky; radiation sensors; gan gan; particle ... See more keywords