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   Articles with "gan gate" as a keyword



High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

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recommendations! Published in 2021 at "Optical and Quantum Electronics"

DOI: 10.1007/s11082-021-02786-2

Abstract: This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing… read more here.

Keywords: gan gate; inaln; electron; layer ... See more keywords
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

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recommendations! Published in 2020 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2020.113872

Abstract: Abstract Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption… read more here.

Keywords: role algan; algan barrier; gate; gan gate ... See more keywords

p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0184784

Abstract: In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with… read more here.

Keywords: temperature; wtr; wide temperature; versatile platform ... See more keywords

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

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recommendations! Published in 2024 at "Journal of Applied Physics"

DOI: 10.1063/5.0200487

Abstract: In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on… read more here.

Keywords: gan high; algan gan; gate; geometry ... See more keywords

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0222225

Abstract: The total ionizing dose effect of Mg-doped p-GaN gate stack have been investigated in this Letter on the whole gate voltage swing arranging from −1.3 to +1.5V. Additionally, two distinct kinds of mechanisms of trap… read more here.

Keywords: voltage; mechanism; ray irradiation; gan gate ... See more keywords

Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

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recommendations! Published in 2025 at "Applied Physics Letters"

DOI: 10.1063/5.0287320

Abstract: This study investigates the impact of 60Co γ-ray irradiation on the gate leakage mechanism of Schottky-type p-GaN gate AlGaN/GaN HEMTs. Devices with breakdown voltage of 650 V were irradiated with 60Co γ-ray at a gate bias… read more here.

Keywords: irradiation; gate leakage; gate; gate algan ... See more keywords

On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate

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recommendations! Published in 2019 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ab5607

Abstract: A physics-based analytical method has been developed to correctly estimate the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate. This analysis considers the effect of all polarization charges at different… read more here.

Keywords: voltage; voltage normally; threshold voltage; effect ... See more keywords
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Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor

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recommendations! Published in 2021 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/abd008

Abstract: GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of… read more here.

Keywords: voltage; power; gan gate; transistor ... See more keywords

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

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recommendations! Published in 2021 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/abd959

Abstract: In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control… read more here.

Keywords: hemt technology; lfer; compatible gan; gan gate ... See more keywords

Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate

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recommendations! Published in 2023 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/acdab6

Abstract: In this paper, we proposed a novel junction-less Ga2O3 Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) with p-GaN gate, named p-GaN Ga2O3-MISFET. A heavily doped thin layer p-GaN is set in the trench gate region to deeply… read more here.

Keywords: vth; misfet; ga2o3 misfet; analytical model ... See more keywords

Study on the temperature effect on heavy ion-induced leakage current in p-GaN gate HEMTs

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recommendations! Published in 2025 at "Physica Scripta"

DOI: 10.1088/1402-4896/ae2214

Abstract: This study investigates the effect of temperature on leakage current degradation in p-GaN gate high electron mobility transistors (HEMTs) under heavy ion irradiation. Experimental results show that Kr ion irradiation at room temperature significantly increases… read more here.

Keywords: temperature; leakage current; effect; gan gate ... See more keywords