High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design
Sign Up to like & getrecommendations! Published in 2021 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-021-02786-2
Abstract: This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing… read more here.
Keywords: gan gate; inaln; electron; layer ... See more keywords
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113872
Abstract: Abstract Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption… read more here.
Keywords: role algan; algan barrier; gate; gan gate ... See more keywords
On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab5607
Abstract: A physics-based analytical method has been developed to correctly estimate the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate. This analysis considers the effect of all polarization charges at different… read more here.
Keywords: voltage; voltage normally; threshold voltage; effect ... See more keywords
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd008
Abstract: GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of… read more here.
Keywords: voltage; power; gan gate; transistor ... See more keywords
A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd959
Abstract: In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control… read more here.
Keywords: hemt technology; lfer; compatible gan; gan gate ... See more keywords
Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gate
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acdab6
Abstract: In this paper, we proposed a novel junction-less Ga2O3 Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) with p-GaN gate, named p-GaN Ga2O3-MISFET. A heavily doped thin layer p-GaN is set in the trench gate region to deeply… read more here.
Keywords: vth; misfet; ga2o3 misfet; analytical model ... See more keywords
$p$ -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2968735
Abstract: A 700-V normally-off ${p}$ -GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately arrayed along the device width and are… read more here.
Keywords: gan gate; tex math; reverse; conduction ... See more keywords
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2828702
Abstract: We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that,… read more here.
Keywords: voltage; threshold voltage; algan gan; gan gate ... See more keywords
Monolithic Integration of Gate Driver and Protection Modules with p-GaN Gate Power HEMTs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3102387
Abstract: The high-speed superiority of GaN power devices with silicon-based peripheral circuits is not yet fully leveraged, mainly due to the parasitic inductance of interconnections. In this work, we demonstrate a GaN-based gate driver with an… read more here.
Keywords: protection; gate; power; gan gate ... See more keywords
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Sign Up to like & getrecommendations! Published in 2017 at "Energies"
DOI: 10.3390/en10020153
Abstract: GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews… read more here.
Keywords: paper; gate; technology reliability; gan gate ... See more keywords
Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020654
Abstract: In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part.… read more here.
Keywords: gate; hemts; modulation range; gan gate ... See more keywords