Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.06.208
Abstract: Abstract The effect of carbon impurities on electrical resistivity of Mg doped GaN grown by metal organic chemical vapor deposition (MOCVD) was investigated. It was noted that when the growth rate increases or the growth… read more here.
Keywords: resistivity; carbon; type gan; residual carbon ... See more keywords
High free carrier concentration in p-GaN grown on AlN substrates
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DOI: 10.1063/1.4995239
Abstract: A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN… read more here.
Keywords: aln substrates; aln; high free; concentration ... See more keywords