Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125522
Abstract: Abstract The integration of gallium nitride with low-cost, transparent substrates such as glass and crystallographically incompatible substrates such as Si(0 0 1) has been long desired for III-N electronics. Here the authors demonstrate how GaN growth on… read more here.
Keywords: seed; gan growth; oriented silicon; silicon seed ... See more keywords
Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/tsm.2025.3558328
Abstract: Achieving long-duration, large bulk GaN growth is crucial to supply low-cost, high-quality GaN. Halogen-free vapor phase epitaxy (HF-VPE) is a promising method for bulk GaN growth but faces challenges due to severe polycrystals deposition on… read more here.
Keywords: surface; gas; decomposition; gan growth ... See more keywords
Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ab8723
Abstract: Using density functional calculations, we clarify the oxygen incorporation mechanism in vicinal m-GaN growth by metal-organic vapor-phase epitaxy. We first identify reconstructed structures of 5° off m-GaN toward the ±c directions. Next, we explore preferable… read more here.
Keywords: vicinal gan; gan growth; computational study; study oxygen ... See more keywords