A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz
Sign Up to like & getrecommendations! Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32404
Abstract: A new scalable small‐signal model for 0.1 μm AlGaN/GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in… read more here.
Keywords: gan hemt; 110 ghz; small signal; hemt 110 ... See more keywords
Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00503-4
Abstract: AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in threshold voltage. The performance of proposed device is analyzed and compared… read more here.
Keywords: step gate; multi step; step; performance ... See more keywords
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153774
Abstract: Abstract The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on… read more here.
Keywords: algan gan; gan hemt; drain current; graded channel ... See more keywords
Thermal management of GaN HEMT devices using serpentine minichannel heat sinks
Sign Up to like & getrecommendations! Published in 2018 at "Applied Thermal Engineering"
DOI: 10.1016/j.applthermaleng.2018.05.072
Abstract: Abstract An experimental and numerical investigation of water-cooled serpentine rectangular minichannel heat sinks (MCHS) has been performed to assess their suitability for the thermal management of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) devices. A Finite… read more here.
Keywords: minichannel heat; heat sinks; thermal management; heat ... See more keywords
Degradation indicators of power-GaN-HEMT under switching power-cycling
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113412
Abstract: Abstract This paper describes the design of a power-cycling test bench to study the reliability of power-GaN-HEMT power switches. The aim of the presented paper is to study the measurable electrical consequences of internal degradation… read more here.
Keywords: degradation; power; power cycling; degradation indicators ... See more keywords
The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.105694
Abstract: Abstract This work presents the development of Fe ion implantation processes for the fabrication of thermally stable isolation of AlGaN/GaN high electron mobility transistors (HEMTs). Experiments, carried out by the triple Fe+ implantation into AlGaN/GaN… read more here.
Keywords: algan gan; gan hemt; isolation; interplay damage ... See more keywords
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.002
Abstract: Abstract In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at… read more here.
Keywords: gate; power; hemt; hemt algan ... See more keywords
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.12.027
Abstract: Abstract In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain… read more here.
Keywords: current collapse; algan gan; gan hemt; drain current ... See more keywords
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Microwave and Wireless Technologies"
DOI: 10.1017/s1759078719000059
Abstract: Abstract Guaranteeing charge conservation of empirically extracted Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and artifacts in the prediction. However, dispersive effects, such as thermal and charge-trapping phenomena, may… read more here.
Keywords: non isodynamic; gan hemt; charge conservative; multi bias ... See more keywords
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050584
Abstract: Integration of nitrides with other material systems has recently become of interest due to the high performance of GaN-based high-electron mobility transistors. However, the elevated growth temperatures often used to grow high quality AlN pose… read more here.
Keywords: low temperature; temperature; aln gan; gan hemt ... See more keywords
Equivalent circuit model of GaN HEMT with non-ideal effects considered through genetic algorithm
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/acdadd
Abstract: This work proposes a semi-physical equivalent circuit model for GaN-based high electron mobility transistor (GaN HEMT), taking into account the non-ideal effects of both current source and resistance-capacitance components. The current source model is built… read more here.
Keywords: non ideal; equivalent circuit; circuit model; gan hemt ... See more keywords