Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00805-7
Abstract: This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.… read more here.
Keywords: algan aln; aln gan; gain; gan hemts ... See more keywords
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113461
Abstract: Abstract The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of… read more here.
Keywords: layer; gan hemts; buffer breakdown; growth ... See more keywords
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
Sign Up to like & getrecommendations! Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114255
Abstract: This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and… read more here.
Keywords: gan hemts; charge trapping; negative charge; trapping gan ... See more keywords
C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
Sign Up to like & getrecommendations! Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.07.035
Abstract: Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The… read more here.
Keywords: interface defects; dlts interface; gan hemts; 22ga0 78n ... See more keywords
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.02.011
Abstract: Abstract In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be… read more here.
Keywords: 2deg concentration; gan hemts; algan gan; gate leakage ... See more keywords
490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108109
Abstract: Abstract In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 °C for… read more here.
Keywords: threshold voltage; drain current; gan hemts; enhancement mode ... See more keywords
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa5473
Abstract: The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the… read more here.
Keywords: algan aln; anomalous behavior; aln gan; gan hemts ... See more keywords
FEM thermal analysis of high power GaN-on-diamond HEMTs
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/10/104005
Abstract: A three-dimensional thermal analysis of GaN HEMTs on diamond substrate is investigated using the finite element method. The diamond substrate thickness, area and shape, transition layer thickness and thermal conductivity of the transition layer are… read more here.
Keywords: diamond; diamond substrate; thermal analysis; gan hemts ... See more keywords
RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2992798
Abstract: We present a simple but accurate 1-D methodology of modeling for AlGaN/GaN High Electron Mobility Transistors (HEMTs), and by which means study its Reduced Surface Field (RESURF) effect. By using the Effective Concentration Profile Concept,… read more here.
Keywords: algan gan; gan hemts; methodology; concentration profile ... See more keywords
Fast-Pulsed Characterization of RF GaN HEMTs in Lifetest Systems
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2016.2628717
Abstract: We report a new application of microsecond-pulsed current–voltage characterization of field-effect transistor (FET) devices; namely, in compact, mutlichannel DC and RF lifetest systems. This application is important for routine monitoring of trap-related signature parameters in… read more here.
Keywords: gan hemts; lifetest systems; characterization gan; pulsed characterization ... See more keywords
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2712782
Abstract: AlGaN/GaN HEMTs with two kinds of p-type metal-oxide (CuO and NiOx) gates have been fabricated, in which the threshold voltage can be modulated effectively. Especially, the threshold voltage of the device shows a 0.7 V… read more here.
Keywords: voltage; gan hemts; algan gan; threshold voltage ... See more keywords