Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.153775
Abstract: Abstract This paper reviews the microstructural and electrical properties of Au/n-GaN metal/semiconductor (MS) diode with an e-beam evaporated SrTiO3(STO) as an insulating layer between the Au and n-GaN substrate. The microstructural properties of STO thin… read more here.
Keywords: beam evaporated; diode; gan heterojunction; sto ... See more keywords
Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate
Sign Up to like & getrecommendations! Published in 2020 at "Materials Letters"
DOI: 10.1016/j.matlet.2020.128395
Abstract: Abstract The influence of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate is systematically investigated. The atomic force microscope images show that the samples possess a smooth surface (the root… read more here.
Keywords: nitridation time; quality; algan gan; gan heterojunction ... See more keywords
Electroluminescence from amorphous GIZO/p-GaN heterojunction light-emitting diodes
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105053
Abstract: Abstract The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The light emissions were observed at… read more here.
Keywords: gan heterojunction; electroluminescence amorphous; gizo gan; heterojunction light ... See more keywords
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.05.009
Abstract: Abstract We propose a specialized gate-drain separation structure for use in investigation of the dynamic behavior of the thermal transport characteristics in AlGaN/AlN/GaN heterojunction transistors. Using this structure, the influence of the two-dimensional electron gas… read more here.
Keywords: algan aln; temperature; aln gan; gan heterojunction ... See more keywords
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
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DOI: 10.1038/s41598-018-30237-8
Abstract: Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using Kelvin Probe… read more here.
Keywords: gan heterojunction; photodetection properties; mos2; heterojunction ... See more keywords
Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab9eca
Abstract: In this paper, The Vertical Power MOSFET with Partial GaN/Si Heterojunction is proposed, and the Partial GaN/Si Heterojunction double-diffused MOSFET（Partial GaN/Si VDMOS）and U-shaped MOSFET（Partial GaN/Si UMOS）are simulated. Thanks to the breakdown point transfer technology（BPT）, the… read more here.
Keywords: partial gan; gan heterojunction; breakdown point; mosfet partial ... See more keywords
Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage
Sign Up to like & getrecommendations! Published in 2018 at "Nanomaterials"
DOI: 10.3390/nano8121039
Abstract: In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s))… read more here.
Keywords: carrier extraction; gan heterojunction; heterojunction; interface ... See more keywords
Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor
Sign Up to like & getrecommendations! Published in 2020 at "Beilstein Journal of Nanotechnology"
DOI: 10.3762/bjnano.11.166
Abstract: 1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement… read more here.
Keywords: algan aln; aln gan; gan heterojunction; strain ... See more keywords