A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
Sign Up to like & getrecommendations! Published in 2021 at "Measurement"
DOI: 10.1016/j.measurement.2021.110100
Abstract: Abstract Hydrogen (H2) has been widely used in H2 fuelled vehicles, semiconductor fabrication, medical treatments, chemical industry and industrial aerospace applications. However, H2 is a highly explosive gas (if H2 concentration exceeds 4.65 vol% in air)… read more here.
Keywords: schottky diode; algan gan; heterostructure based; industrial applications ... See more keywords
Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection
Sign Up to like & getrecommendations! Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.04.025
Abstract: Abstract A simple two-step solvothermal method was employed to grow ZnO nanostructres on p-GaN/sapphire at low temperature. The obtained ZnO nanostructres were uniformly distributed on the surface of p-GaN/sapphire substrates and showed the sheet-like morphology.… read more here.
Keywords: nanosheets gan; simple fabrication; zno nanosheets; zno ... See more keywords
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.01.031
Abstract: Abstract Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure field-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution,… read more here.
Keywords: field; algan gan; effect; gan heterostructure ... See more keywords
Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.05.063
Abstract: Abstract In this study, normally-off AlGaN/GaN heterostructure junction field-effect transistors (HJFETs) with p-GaN cap layer were reported, in which intrinsic GaN were proposed as blocking layers between the p-GaN cap layer and the AlGaN layer… read more here.
Keywords: layer; heterostructure junction; algan gan; normally algan ... See more keywords
Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5118771
Abstract: Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons… read more here.
Keywords: emission; algan gan; terahertz emission; gan heterostructure ... See more keywords
Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure
Sign Up to like & getrecommendations! Published in 2021 at "AIP Advances"
DOI: 10.1063/5.0043981
Abstract: A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission model, the temperature-dependent current–voltage… read more here.
Keywords: schottky barrier; schottky contact; algan gan; gan heterostructure ... See more keywords
Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3037272
Abstract: The combination of ultrathin-barrier (UTB) AlGaN (< 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recess-free enhancement-mode… read more here.
Keywords: algan gan; ultrathin barrier; gan heterostructure; sup ... See more keywords