Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.146016
Abstract: Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role… read more here.
Keywords: gan heterostructures; extended defects; surface photovoltage; inxga1 gan ... See more keywords
Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.148189
Abstract: Abstract The article proposes a new methodology that combined light-assisted Scanning Surface Potential Microscopy (SSPM), Scanning Spreading Resistance Microscopy (SSRM) and Scanning Capacitance Microscopy (SCM) techniques for the extended nanoscale characterization of the electrical properties… read more here.
Keywords: light assisted; microscopy; surface; algan gan ... See more keywords
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.061
Abstract: Abstract InGaN/GaN heterostructured samples were grown at different temperatures varying from 680 °C to 760 °C on c -plane sapphire substrates using a horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Systematic investigation of structural, optical,… read more here.
Keywords: temperature; growth temperature; ingan gan; gan heterostructures ... See more keywords
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.11.008
Abstract: Abstract AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis… read more here.
Keywords: algan gan; sic substrate; axis case; gan heterostructures ... See more keywords
Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc05652a
Abstract: Reduction of the reverse leakage current is critical to AlGaN/GaN heterostructures in high power and high frequency applications. Taking AlGaN/GaN Schottky barrier diodes (SBDs) as an example, we demonstrate both theoretically and experimentally that low-fluence… read more here.
Keywords: algan gan; dls; gan heterostructures; reverse leakage ... See more keywords
Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4983386
Abstract: We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed… read more here.
Keywords: relaxation; layer; high quality; algan gan ... See more keywords
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0011685
Abstract: We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical gain resulting from the transistor-like operation of the device, a photocurrent as high… read more here.
Keywords: rejection ratio; heterostructures grown; algan gan; ratio ... See more keywords
Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/3/037302
Abstract: The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed… read more here.
Keywords: mechanism; ohmic contacts; contacts algan; algan gan ... See more keywords
Distribution of donor states on the surface of AlGaN/GaN heterostructures
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac0792
Abstract: The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation. A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify… read more here.
Keywords: gan heterostructures; donor states; distribution model; distribution ... See more keywords
Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study
Sign Up to like & getrecommendations! Published in 2018 at "Materials Research Express"
DOI: 10.1088/2053-1591/aad11e
Abstract: Photoluminescence (PL) spectrumprovides themost conventionalmeasurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry–Perot oscillations are often observedmodulating the emission peaks. Afittingmodel for PL intensity accounting themicrocavity between air/GaNandGaN/sapphire heterostructure was proposed to… read more here.
Keywords: ingan gan; microcavity effect; heterostructures interfacial; modelling microcavity ... See more keywords
Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Physical review applied"
DOI: 10.1103/physrevapplied.13.044034
Abstract: We show that $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ heterostructures exhibit significant $\mathrm{N}$ deficiency at the bottom $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ interface, and that these $\mathrm{N}$ vacancies are responsible for the trapping of holes observed in unoptimized $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ high electron mobility… read more here.
Keywords: mathrm mathrm; gan gan; interfacial vacancies; mathrm ... See more keywords