Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202211738
Abstract: Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges… read more here.
Keywords: contact; high electron; gan high; ti3c2tx mxene ... See more keywords
Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2017 at "Electronic Materials Letters"
DOI: 10.1007/s13391-017-1606-1
Abstract: A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage… read more here.
Keywords: dependent characteristics; gan high; alinn gan; high electron ... See more keywords
Outperforming Transparent Ultraviolet Photodetectors Based on the AlGaN/GaN High Electron Mobility Transistor on SiC.
Sign Up to like & getrecommendations! Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.5c10140
Abstract: The AlGaN/GaN high electron mobility transistor (HEMT) epi-structure on SiC has excellent promise for developing industrially viable transparent ultraviolet (UV) photodetectors (PDs) that outperform current transparent PDs. They offer very high responsivity while maintaining a… read more here.
Keywords: mobility transistor; electron mobility; gan high; algan gan ... See more keywords
Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors.
Sign Up to like & getrecommendations! Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.5c13149
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) are critical components in modern radio frequency (RF) power amplifiers. However, commercial AlGaN/GaN HEMTs often require power derating to maintain safe channel temperatures. Deposition of a polycrystalline diamond heat… read more here.
Keywords: heat; gan high; top side; algan gan ... See more keywords
Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.9b05999
Abstract: Flexible electronic technology has attracted great attentions due to its wide range of potential applications in the fields of healthcare, robotics and artificial intelligence, etc. In this letter, we have successfully fabricated flexible AlGaN/GaN High-Electron-Mobility… read more here.
Keywords: flexible algan; gan high; algan gan; high electron ... See more keywords
Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion
Sign Up to like & getrecommendations! Published in 2023 at "CrystEngComm"
DOI: 10.1039/d3ce00132f
Abstract: A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices. read more here.
Keywords: high electron; gan high; novel mode; mode gan ... See more keywords
Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0200487
Abstract: In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on… read more here.
Keywords: gan high; algan gan; gate; geometry ... See more keywords
On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0226707
Abstract: The current research investigates the potential advantages of optimally combining wide bandgap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. Various compositions of 10 nm AlxTayO oxide films are grown on the Al0.3Ga0.7N/GaN… read more here.
Keywords: gan high; 3ga0 gan; hemt devices; al0 3ga0 ... See more keywords
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/1/017304
Abstract: The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each… read more here.
Keywords: gan high; algan gan; power fluorine; fluorine ... See more keywords
Current collapse degradation on GaN high electron mobility transistor using a new derived surface trap modelling
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/42/8/032801
Abstract: A virtual gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN high electron mobility transistor (HEMT). The model confirms the utility of a field plate (FP) improves sheet carrier… read more here.
Keywords: gan high; field; high electron; electron ... See more keywords