Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202211738
Abstract: Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges… read more here.
Keywords: contact; high electron; gan high; ti3c2tx mxene ... See more keywords
Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2017 at "Electronic Materials Letters"
DOI: 10.1007/s13391-017-1606-1
Abstract: A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage… read more here.
Keywords: dependent characteristics; gan high; alinn gan; high electron ... See more keywords
Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.9b05999
Abstract: Flexible electronic technology has attracted great attentions due to its wide range of potential applications in the fields of healthcare, robotics and artificial intelligence, etc. In this letter, we have successfully fabricated flexible AlGaN/GaN High-Electron-Mobility… read more here.
Keywords: flexible algan; gan high; algan gan; high electron ... See more keywords
Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion
Sign Up to like & getrecommendations! Published in 2023 at "CrystEngComm"
DOI: 10.1039/d3ce00132f
Abstract: A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices. read more here.
Keywords: high electron; gan high; novel mode; mode gan ... See more keywords
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/1/017304
Abstract: The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each… read more here.
Keywords: gan high; algan gan; power fluorine; fluorine ... See more keywords
Current collapse degradation on GaN high electron mobility transistor using a new derived surface trap modelling
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/42/8/032801
Abstract: A virtual gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN high electron mobility transistor (HEMT). The model confirms the utility of a field plate (FP) improves sheet carrier… read more here.
Keywords: gan high; field; high electron; electron ... See more keywords
Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2017.2773065
Abstract: Due to the high dissipated power densities present in GaN high-electron-mobility transistors (HEMTs) in high-power radio frequency applications, thermal analysis and thermal management of these devices are important in achieving their full potential. In this… read more here.
Keywords: gan high; time; high electron; time constants ... See more keywords
AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers
Sign Up to like & getrecommendations! Published in 2017 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0161711jss
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter ("a-parameter") to hexagonal GaN. The quality of the GaN… read more here.
Keywords: alloy; gan high; algan gan; high electron ... See more keywords
Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material
Sign Up to like & getrecommendations! Published in 2020 at "Defence Science Journal"
DOI: 10.14429/dsj.70.16360
Abstract: In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used… read more here.
Keywords: passivation; gan high; electron mobility; high electron ... See more keywords
Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15176043
Abstract: An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device… read more here.
Keywords: algan gan; growth; high electron; gan high ... See more keywords