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   Articles with "gan ingan" as a keyword



Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films

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recommendations! Published in 2019 at "Journal of Luminescence"

DOI: 10.1016/j.jlumin.2019.01.012

Abstract: Abstract We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis… read more here.

Keywords: thin films; photoluminescence linewidth; linewidth narrowing; gan ingan ... See more keywords

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

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recommendations! Published in 2017 at "Scientific Reports"

DOI: 10.1038/s41598-017-18833-6

Abstract: In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency… read more here.

Keywords: gan ingan; core shell; ingan core; carrier ... See more keywords

Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.

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recommendations! Published in 2019 at "Nanoscale"

DOI: 10.1039/c9nr02823d

Abstract: The growth of semi-polar (112[combining macron]2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/InGaN… read more here.

Keywords: gan ingan; semi polar; polar 112; gan ... See more keywords

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0187064

Abstract: In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as the gate material. A… read more here.

Keywords: ingan aln; band modulated; energy band; ion ioff ... See more keywords