Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2019.01.012
Abstract: Abstract We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis… read more here.
Keywords: thin films; photoluminescence linewidth; linewidth narrowing; gan ingan ... See more keywords
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-18833-6
Abstract: In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency… read more here.
Keywords: gan ingan; core shell; ingan core; carrier ... See more keywords
Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr02823d
Abstract: The growth of semi-polar (112[combining macron]2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/InGaN… read more here.
Keywords: gan ingan; semi polar; polar 112; gan ... See more keywords