Pyroelectric Property of Binary Nitrides (AlN, GaN and InN)
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Thermophysics"
DOI: 10.1007/s10765-019-2481-9
Abstract: AbstractThe pyroelectric (PY) property of binary nitrides (AlN, GaN and InN) has been explored theoretically. The spontaneous and piezoelectric (PZ) polarization modifies the thermal conductivity of these nitrides. The thermal conductivities as a function of… read more here.
Keywords: aln gan; property binary; binary nitrides; gan inn ... See more keywords
Boron doped GaN and InN: Potential candidates for spintronics
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4976815
Abstract: The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting… read more here.
Keywords: boron doped; doped gan; potential candidates; candidates spintronics ... See more keywords
Polarization Doping in a GaN-InN System—Ab Initio Simulation
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DOI: 10.3390/ma16031227
Abstract: Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging… read more here.
Keywords: inn system; polarization doping; polarization; gan inn ... See more keywords