Phonon transport across rough AlGaN/GaN interfaces with varying Al–Ga atomic ratios
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0193544
Abstract: Exploring interfacial thermal transport of a heterojunction interface is crucial to achieving advanced thermal management for gallium nitride-based high electron mobility transistor devices. The current research primarily focuses on material enhancements and microstructure design at… read more here.
Keywords: rough algan; transport; across rough; gan interfaces ... See more keywords