Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition
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DOI: 10.1016/j.apsusc.2017.09.072
Abstract: Abstract In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al 2 O 3 film on the sensing area utilizing atomic layer deposition (ALD). The presence of… read more here.
Keywords: sensitive field; gan ion; ion sensitive; algan gan ... See more keywords