Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2991164
Abstract: We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed… read more here.
Keywords: tex math; gan junctionless; inline formula; gate structure ... See more keywords
Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2023.3346945
Abstract: The evolution trend of wireless communication systems tends to ultra-high data rate, ultra-low latency, and high bandwidth systems. It is foreseen that 6G wireless communication systems will be developed in the range of 100–300 GHz… read more here.
Keywords: lna; device; shell doped; gan junctionless ... See more keywords