Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
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DOI: 10.1063/5.0044726
Abstract: We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min). Results from similar common-anode… read more here.
Keywords: algan gan; gan junctions; ultra high; resistance ... See more keywords