Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145267
Abstract: Abstract Using the complexes of structural and spectroscopic diagnostic techniques, we investigated the influence of the layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with… read more here.
Keywords: gan layer; layer; sic por; silicon ... See more keywords
Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.10.013
Abstract: Abstract AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (VBR) and reducing the turn-on voltage (VON).… read more here.
Keywords: combined dual; anode metal; voltage; gan layer ... See more keywords
Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.06.006
Abstract: Abstract The role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface morphology, crystalline quality and optical property were… read more here.
Keywords: tmg flow; role tmg; flow rate; gan layer ... See more keywords
Effect of p-GaN layer grown with H 2 carrier gas on wall-plug efficiency of high-power LEDs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.03.012
Abstract: Abstract The effect of employing different carrier gases (H2 only and 1:1 vol% N2:H2) in the p-type GaN (p-GaN) layer on the wall-plug efficiency (WPE) of high-power light-emitting diodes (LEDs) is studied. Since GaN crystal… read more here.
Keywords: gan layer; carrier; high power; carrier gas ... See more keywords
Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab31d0
Abstract: The light to be trapped inside light-emitting diodes (LEDs) greatly affects the luminous efficiency and device lifetime. Abrupt difference in refractive index between the sapphire substrate and GaN-based LEDs causes the light trapping by total… read more here.
Keywords: gan layer; emitting diodes; light emitting; nanoporous gan ... See more keywords
Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer.
Sign Up to like & getrecommendations! Published in 2022 at "Optics letters"
DOI: 10.1364/ol.461732
Abstract: In this report, a p+-GaN/SiO2/Ni tunnel junction with a local SiO2 insulation layer is designed to manage the current distribution for commercially structured AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) with a thin p-GaN layer. The… read more here.
Keywords: gan layer; current distribution; layer; tunnel junction ... See more keywords