Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Sign Up to like & getrecommendations! Published in 2019 at "Crystal Research and Technology"
DOI: 10.1002/crat.201900129
Abstract: Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × 1010… read more here.
Keywords: growth properties; intentionally carbon; properties intentionally; carbon ... See more keywords
Preparation and properties of GaN:Al layers grown by radio-frequency magnetron sputter epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2017.01.017
Abstract: Abstract Ga-rich Al x Ga 1– x N ( x « 0.01) (GaN:Al) single-crystalline layers were grown by radio-frequency magnetron sputter epitaxy using N 2 /Ar gas and a 6-N grade AlGa alloy target. When… read more here.
Keywords: gan layers; frequency magnetron; radio frequency; grown radio ... See more keywords
Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4993180
Abstract: Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants for achieving semi-insulating GaN, Fe, and C cause… read more here.
Keywords: carbon; gan layers; currents fermi; level shifts ... See more keywords
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5098965
Abstract: We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers… read more here.
Keywords: gan layers; hole traps; quartz free; spectroscopy ... See more keywords
Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0143985
Abstract: It is highly challenging to grow high-quality gallium nitride (GaN) layers on silicon (Si) substrates due to the intrinsic mismatching of their structural and thermal properties. Aluminum nitride (AlN) interlayers have been used to induce… read more here.
Keywords: aln interlayer; strain gan; layer; strain ... See more keywords
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618090026
Abstract: The Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the… read more here.
Keywords: sublimation sandwich; sandwich method; gan layers;
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Technical Physics"
DOI: 10.1134/s1063784219040054
Abstract: Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation… read more here.
Keywords: aln gan; layers 100; gan layers; 100 substrate ... See more keywords
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15196916
Abstract: A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a… read more here.
Keywords: growth; vga concentration; gan layers; formation ... See more keywords