Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
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DOI: 10.1038/s41598-017-17033-6
Abstract: The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu+3 ion is… read more here.
Keywords: droop gan; physics efficiency; efficiency droop; physics ... See more keywords
Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5030208
Abstract: The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of… read more here.
Keywords: energy; energy peaks; ingan gan; gan light ... See more keywords
Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
Sign Up to like & getrecommendations! Published in 2022 at "PLOS ONE"
DOI: 10.1371/journal.pone.0277667
Abstract: Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous… read more here.
Keywords: light emitting; ingan gan; buffer layer; porous gan ... See more keywords