Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors
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DOI: 10.1039/d0ra00464b
Abstract: Spin relaxation, affected by interfacial effects, is a critical process for electrical spin injection and transport in semiconductor-based spintronics. In this work, the electrical spin injection into n-GaN via n-GaN/MgO/Co tunnel barrier was realized, and… read more here.
Keywords: relaxation; gan mgo; interfacial effects; relaxation induced ... See more keywords