NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0251561
Abstract: This study demonstrates the high-temperature operation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) based on nickel oxide (NiOx) as an intermediate gate oxide, achieving stable performance up to 400 °C. Compared to the control sample… read more here.
Keywords: gan mis; stability; gate oxide; gate ... See more keywords
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2023.3265372
Abstract: In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) platform. The DG-NAND circuit has… read more here.
Keywords: dual gate; mis hemts; mode device; gan mis ... See more keywords
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2722002
Abstract: This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate… read more here.
Keywords: gan mis; sub sub; sub; gate insulator ... See more keywords
1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3403682
Abstract: Atmospheric neutron-induced single-event burnout (SEB) is a severe reliability challenge for terrestrial electronic components. In this work, the robust atmospheric neutron irradiation-hardened capability is demonstrated in AlGaN/GaN MIS-HEMTs with 3-D stacking pad-connected Schottky structure. Such… read more here.
Keywords: gan mis; irradiation; stacking pad; algan gan ... See more keywords
Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14061100
Abstract: A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD)… read more here.
Keywords: aln gan; mis hemts; aln; gan mis ... See more keywords