Vertical GaN MISFET for chip‐on‐chip high speed laser driving applications
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DOI: 10.1049/el.2020.0896
Abstract: In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad area distributed Bragg reflector diode laser. The intention of this work had been… read more here.
Keywords: chip chip; gan misfet; chip; vertical gan ... See more keywords