Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
Sign Up to like & getrecommendations! Published in 2021 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2021.109473
Abstract: Abstract The effects of high energy (57 MeV) proton irradiation on the electrical characteristics of AlGaN/GaN MISHEMTs were investigated. The MISHEMTs were fabricated with two different types of gate dielectrics, atomic layer deposited (ALD)-Al2O3 and plasma… read more here.
Keywords: algan gan; gate dielectrics; gate; high energy ... See more keywords
The Electrical and Thermal Characteristics of Stacked GaN MISHEMT
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13122101
Abstract: To study the working performance of 3D stacked chips, a double-layer stacked GaN MISHEMTs structure was designed to study the electro-thermal characteristics and heat transfer process of stacked chips. Firstly, the electrical characteristics of double-layer… read more here.
Keywords: double layer; layer; thermal characteristics; stacked gan ... See more keywords