Electrothermal DC characterization of GaN on Si MOS-HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.002
Abstract: Abstract DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance,… read more here.
Keywords: methodology; mos hemts; temperature; electrothermal characterization ... See more keywords
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/7/074001
Abstract: An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance… read more here.
Keywords: polar gan; parameter extraction; mode polar; small signal ... See more keywords