Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Engineering Materials"
DOI: 10.1002/adem.202001430
Abstract: Micro/nanowire light‐emitting diodes (LEDs) have inspired considerable research interests due to their potential applications in microdisplays and micro/nano‐optoelectronic integrated systems. Herein, a single InGaN/GaN multiple‐quantum‐well (MQW) microwire‐based flexible LED with high‐efficiency current injection and spreading… read more here.
Keywords: ingan gan; gan multiple; light emitting; single ingan ... See more keywords
Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-021-01728-1
Abstract: This paper presents a numerical simulation study of p-i-n photodiodes based on In0.1Ga0.9 N/GaN multiple quantum wells (MQWs) of 2.5-nm-thick In0.1Ga0.9 N QWs and 12-nm-thick GaN barriers embedded into the intrinsic regions. The device performance is evaluated… read more here.
Keywords: frequency; gan multiple; polarization; quantum ... See more keywords
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159851
Abstract: Abstract The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) structures grown by metal-organic chemical vapor deposition (MOCVD) with varying hydrogen (H2) treatments after GaN cap layer growth are investigated to elucidate the role… read more here.
Keywords: growth; treatment; photoluminescence properties; properties ingan ... See more keywords
Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication
Sign Up to like & getrecommendations! Published in 2017 at "Optics Communications"
DOI: 10.1016/j.optcom.2016.10.070
Abstract: Abstract This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters and receivers simultaneously, and… read more here.
Keywords: communication; gan multiple; multiple quantum; ingan gan ... See more keywords
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.05.014
Abstract: Abstract Two structures of InGaN/GaN multiple quantum well solar cells are grown and fabricated in this work, which are 30 periods In0.14Ga0.86N/GaN (1.72 nm/4.14 nm, sample A) and In0.19Ga0.81N/GaN (2.76 nm/4.14 nm, sample B), respectively. The peak… read more here.
Keywords: gan multiple; solar cells; multiple quantum; ingan gan ... See more keywords
Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror
Sign Up to like & getrecommendations! Published in 2020 at "Vacuum"
DOI: 10.1016/j.vacuum.2020.109669
Abstract: Abstract Mixed electrolyte of oxalic acid and NaNO3, which can be used to fabricate an InGaN/GaN multiple quantum well (MQW) structure with an embedded porous-GaN distributed Bragg reflector (DBR), is more effective than oxalic acid… read more here.
Keywords: porous gan; quantum; gan multiple; multiple quantum ... See more keywords
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5028257
Abstract: Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW,… read more here.
Keywords: gan multiple; multiple quantum; ingan gan; green emission ... See more keywords
Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/36/2/028501
Abstract: Phonon sidebands in the electrolumiescence (EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing (ES) between the zero-phonon and first-order phonon-assisted luminescence lines… read more here.
Keywords: temperature; gan multiple; phonon; carrier ... See more keywords
Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift
Sign Up to like & getrecommendations! Published in 2020 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ab6967
Abstract: In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well (MQW) structures, the electroluminescence (EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm… read more here.
Keywords: shift; gan multiple; polarization field; ingan gan ... See more keywords
Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/44/4/042801
Abstract: The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells (MQWs) structure, to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN, as well as to enhance the light output.… read more here.
Keywords: ingan gan; patterned ingan; green ingan; multiple quantum ... See more keywords
Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3264983
Abstract: In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According… read more here.
Keywords: mini leds; ingan gan; green ingan; multiple quantum ... See more keywords